dsec29-06ac low loss and soft recovery high performance fast recovery diode common cathode hiperfred 1 2 3 part number dsec29-06ac backside: isolated fav rr tns 35 rrm 15 600 = v= v i= a 2x features / advantages: applications: package: planar passivated chips very low leakage current very short recovery time improved thermal behaviour very low irm-values very soft recovery behaviour avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low irm reduces: - power dissipation within the diode - turn-on loss in the commutating switch antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode rectifiers in switch mode power supplies (smps) uninterruptible power supplies (ups) isoplus220 industry standard outline rohs compliant epoxy meets ul 94v-0 soldering pins for pcb mounting backside: dcb ceramic reduced weight advanced power cycling isolation voltage: v~ 3600 ixys reserves the right to change limits, conditions and dimensions. 20131024b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
dsec29-06ac n s 5 a t vj =c reverse recovery time a 7 35 95 n s i rm max. reverse recovery current i f =a; 15 25 t=100c vj -di f =a/s 200 /dt t rr v r =v 300 t vj =c 25 t=100c vj e as 0.1 mj i as =al =h i ar a v a =0.1 f = 10 khz 1.5v r typ.: 1 180 non-repetitive avalanche energy repetitive avalanche current t= c 25 vj v = v symbol definition ratings typ. max. i r v i a v f 2.04 r 1.6 k/ w r min. 15 v rsm v 100 t = 25c vj t = c vj m a 0.5 v = v r t = 25c vj i = a f v t = c c 140 p tot 95 w t = 25c c r k/ w 15 600 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation conditions uni t 2.25 t = 25c vj 150 v f0 v 0.99 t = c vj 175 r f 15 m ? threshold voltage slope resistance for power loss calculation only a 150 v rrm v 600 max. repetitive reverse blocking voltage t = 25c vj c j 12 j unction capacitance v = v 400 t = 25c f = 1 mhz r vj p f i fsm t = 10 ms; (50 hz), sine; t = 45c vj max. forward surge current v = 0 v r t = c vj 175 110 a 600 fav d = rectangular 0.5 average forward current thermal resistance junction to case thjc thermal resistance case to heatsink thch fast diode 600 0.50 ixys reserves the right to change limits, conditions and dimensions. 20131024b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
dsec29-06ac ratings product m arkin g date code part no. logo ul listed ixys abcd assembly code ayyww assembly line xxxxxxxxx ? isoplus? DSEC30-06B to-247ad (3) 600 package t op c t vj c 175 virtual junction temperature -55 weight g 2 symbol definition typ. max. min. conditions operation temperature unit f c n 60 mounting force with clip 20 v v t = 1 second v t = 1 minute isolation voltage mm mm 1.0 3.0 d spp/app creepage distance on surface | st riking distance through air d spb/apb terminal to backside i rms rms current 35 a per terminal 150 -55 terminal to terminal isoplus220 similar part package voltage class dsec30-06a to-247ad (3) 600 delivery mode quantity code no. part number marking on product ordering 1 ) 50/60 hz, rms; i 1 ma isol dsec29-06ac 500810 tube 50 dsec29-06ac standard 3000 3600 isol t stg c 150 storage temperature -55 threshold voltage v 0.99 m ? v 0 max r 0 max slope resistance * 12 equivalent circuits for simulation t = vj i v 0 r 0 fast diode 175 c * on die level ixys reserves the right to change limits, conditions and dimensions. 20131024b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
dsec29-06ac t 12 3 eae1 d1 d l1 l b4 2x b2 2x e 3x b a1 c d3 a2 d2 w die konvexe form des substrates ist typ. < 0.04 mm ber der kunststoffoberfl?che der bauteilunterseite the convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side die geh?useabmessungen entsprechen dem typ to-273 gem?? jedec au?er d und d1 . this drawing will meet all dimensions requiarement of jedec outline to-273 except d and d1 . min max min max a 4.00 5.00 0.157 0.197 a1 2.50 3.00 0.098 0.118 a2 1.60 1.80 0.063 0.071 b 0.90 1.30 0.035 0.051 b2 2.35 2.55 0.093 0.100 b4 1.25 1.65 0.049 0.065 c 0.70 1.00 0.028 0.039 d 15.00 16.00 0.591 0.630 d1 12.00 13.00 0.472 0.512 d2 1.10 1.50 0.043 0.059 d3 14.90 15.50 0.587 0.610 e 10.00 11.00 0.394 0.433 e1 7.50 8.50 0.295 0.335 e 2.54 bsc 0.100 bsc l 13.00 14.50 0.512 0.571 l1 3.00 3.50 0.118 0.138 t 42.5 47.5 w - 0.1 - 0.004 dim. millimeters inches 1 2 3 outlines isoplus220 ixys reserves the right to change limits, conditions and dimensions. 20131024b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
dsec29-06ac 200 600 1000 0 400 800 70 80 90 100 110 120 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 04080120160 0.0 0.5 1.0 1.5 2.0 0 200 400 600 800 1000 0 5 10 15 20 0.0 0.4 0.8 1.2 1.6 v 200 600 1000 0400800 0 10 20 30 40 0 0 0 1 0 0 1 0 500 1000 1500 2000 012 0 10 20 30 40 k f t vj [c] t[s] v fr [v] i rm [a] q r [ c] i f [a] v f [v] -di f /dt [a/ s] t rr [ns] t rr [ s] z thjc [k/w] -di f /dt [a/ s] -di f /dt [a/ i d - ] s f /dt [a/ s] fig. 1 forward current i f versus v f fig. 2 typ. reverse recov. charge q r versus -di f /dt fig. 3 typ. peak reverse current i rm versus -di f /dt fig. 4 dynamic parameters q r ,i rm versus t vj fig. 5 typ. recovery time t rr versus -di f /dt fig. 6 typ. peak forward voltage v fr and t fr versus di f /dt fig. 7 transient thermal impedance junction to case v fr t rr constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.908 0.0052 2 0.350 0.0003 3 0.342 0.017 t vj =150c 100c 25c i f =30a 15 a 7.5 a t vj =100c v r =300v t vj = 100c v r = 300 v i f =30a 15 a 7.5 a i f = 30a 15 a 7.5 a t vj =100c v r =300v i rm q r t vj =100c i f =15a fast diode ixys reserves the right to change limits, conditions and dimensions. 20131024b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
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